The Interface of Sputter-Deposited TiNi Thin Film on (100) Si Wafer

The sputter-deposited TiNi thin films on (001) Si wafer were annealed at 400 to 800 C for 30 min, and their interfaces were studied by using TEM, AES, and XRD analysis. For annealing temperature below 600 C, Ni atoms are the main diffusing species of the film-substrate interface reaction, and NiSi2 compound forms triangularly toward the Si substrate. For annealing temperature higher than 600 C, Si atoms are the main diffusing species, and Ti-Ni-Si ternary compounds are observed. A Ti4Ni4Si7 layer with NiSi2 islands inside, and another Ti1Ni1Si1 layer in between TiNi thin film and the Ti4Ni4Si7 layer, coexist at the interface of specimen annealed at 700-800 C. (Author)