Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication

Integration issues involved in incorporating indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This allows a correlation between the channel doping profile and the electrical results. The inclusion of Rapid Thermal Anneal step after NLDD implant (NLDD RTA) in the standard process is found to be crucial in achieving a Steep Retrograde Channel Profile (SRCP) for effective Short Channel Effects (SCE) and Reverse Short Channel Effects (RSCE) control. Alternative techniques such as boron pocket removal and NLDD dose reduction are also studied. Nevertheless, superiority of the NLDD RTA technique is shown in all aspects of device performance. This allows indium to be a more favorable dopant than boron for high performance nMOSFETs device fabrication.