Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO sub(2)Si structure

Interfacial reactions in Al-0.5%wtCu/Ti/SiO sub(2)Si structure have been investigated up to the annealing temperature of 600 degree C for 30 min in Argon ambient. Annealing temperature at above 500 degree C, Al alloy and Ti start to react and produce Al sub(3)Ti, which was already reported. Annealin...

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Veröffentlicht in:	Journal of materials science 2000-12, Vol.35 (23), p.5857-5860
Hauptverfasser:	Lee, Y K, Latt, Khin Maung, Jaehyung, Kim, Osipowicz, T, Chiam, Sher-Yi, Lee, Kangsoo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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