Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO sub(2)Si structure

Interfacial reactions in Al-0.5%wtCu/Ti/SiO sub(2)Si structure have been investigated up to the annealing temperature of 600 degree C for 30 min in Argon ambient. Annealing temperature at above 500 degree C, Al alloy and Ti start to react and produce Al sub(3)Ti, which was already reported. Annealing at higher temperatures (550 degree C, and 600 degree C) made Al sub(3) Ti transformed into Al sub(5)Ti sub(2), which is thermodynamically more stable than Al sub(3)Ti. The unreacted 52 nm thick Ti which existed underneath of Al sub(5)Ti sub(2) might lead to retardation of the reaction between Al sub(5)Ti sub(2) and the underlying SiO sub(2). Hence, the formation of ternary compound (Al sub(x)Ti sub(y)Si sub(z)) which is believed to be detrimental to the contact metallization layers was protected.