Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO sub(2)Si structure

Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO sub(2)Si structure

Interfacial reactions in Al-0.5%wtCu/Ti/SiO sub(2)Si structure have been investigated up to the annealing temperature of 600 degree C for 30 min in Argon ambient. Annealing temperature at above 500 degree C, Al alloy and Ti start to react and produce Al sub(3)Ti, which was already reported. Annealin...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials science 2000-12, Vol.35 (23), p.5857-5860
Hauptverfasser: Lee, Y K, Latt, Khin Maung, Jaehyung, Kim, Osipowicz, T, Chiam, Sher-Yi, Lee, Kangsoo
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 5860
container_issue 23
container_start_page 5857
container_title Journal of materials science
container_volume 35
creator Lee, Y K
Latt, Khin Maung
Jaehyung, Kim
Osipowicz, T
Chiam, Sher-Yi
Lee, Kangsoo
description Interfacial reactions in Al-0.5%wtCu/Ti/SiO sub(2)Si structure have been investigated up to the annealing temperature of 600 degree C for 30 min in Argon ambient. Annealing temperature at above 500 degree C, Al alloy and Ti start to react and produce Al sub(3)Ti, which was already reported. Annealing at higher temperatures (550 degree C, and 600 degree C) made Al sub(3) Ti transformed into Al sub(5)Ti sub(2), which is thermodynamically more stable than Al sub(3)Ti. The unreacted 52 nm thick Ti which existed underneath of Al sub(5)Ti sub(2) might lead to retardation of the reaction between Al sub(5)Ti sub(2) and the underlying SiO sub(2). Hence, the formation of ternary compound (Al sub(x)Ti sub(y)Si sub(z)) which is believed to be detrimental to the contact metallization layers was protected.
format Article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_27742441</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>27742441</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_277424413</originalsourceid><addsrcrecordid>eNqNisFqwkAQQPdgobH1H-Zi0UN0s03MWaTFHsRCvMuaTGBkk013ZhH79c3BD-jpwXtvohKtjUlNvsme1ZT5qrUuSpMlqqskNnfwLVAvGFpbk3UQ0NZCvufRwkj6xQY6lDENznJnYfF1-F5Cg4NnkjFuXapXxfwmsIvrE60rOgLHy8IsKwKWEGuJAV_VU2sd4-zBF_X2-XHa7dMh-J-ILOeOuEbnbI8-8tmUZW7yPHv_9_gHB8JJ2Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27742441</pqid></control><display><type>article</type><title>Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO sub(2)Si structure</title><source>Springer Nature - Complete Springer Journals</source><creator>Lee, Y K ; Latt, Khin Maung ; Jaehyung, Kim ; Osipowicz, T ; Chiam, Sher-Yi ; Lee, Kangsoo</creator><creatorcontrib>Lee, Y K ; Latt, Khin Maung ; Jaehyung, Kim ; Osipowicz, T ; Chiam, Sher-Yi ; Lee, Kangsoo</creatorcontrib><description>Interfacial reactions in Al-0.5%wtCu/Ti/SiO sub(2)Si structure have been investigated up to the annealing temperature of 600 degree C for 30 min in Argon ambient. Annealing temperature at above 500 degree C, Al alloy and Ti start to react and produce Al sub(3)Ti, which was already reported. Annealing at higher temperatures (550 degree C, and 600 degree C) made Al sub(3) Ti transformed into Al sub(5)Ti sub(2), which is thermodynamically more stable than Al sub(3)Ti. The unreacted 52 nm thick Ti which existed underneath of Al sub(5)Ti sub(2) might lead to retardation of the reaction between Al sub(5)Ti sub(2) and the underlying SiO sub(2). Hence, the formation of ternary compound (Al sub(x)Ti sub(y)Si sub(z)) which is believed to be detrimental to the contact metallization layers was protected.</description><identifier>ISSN: 0022-2461</identifier><language>eng</language><ispartof>Journal of materials science, 2000-12, Vol.35 (23), p.5857-5860</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782</link.rule.ids></links><search><creatorcontrib>Lee, Y K</creatorcontrib><creatorcontrib>Latt, Khin Maung</creatorcontrib><creatorcontrib>Jaehyung, Kim</creatorcontrib><creatorcontrib>Osipowicz, T</creatorcontrib><creatorcontrib>Chiam, Sher-Yi</creatorcontrib><creatorcontrib>Lee, Kangsoo</creatorcontrib><title>Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO sub(2)Si structure</title><title>Journal of materials science</title><description>Interfacial reactions in Al-0.5%wtCu/Ti/SiO sub(2)Si structure have been investigated up to the annealing temperature of 600 degree C for 30 min in Argon ambient. Annealing temperature at above 500 degree C, Al alloy and Ti start to react and produce Al sub(3)Ti, which was already reported. Annealing at higher temperatures (550 degree C, and 600 degree C) made Al sub(3) Ti transformed into Al sub(5)Ti sub(2), which is thermodynamically more stable than Al sub(3)Ti. The unreacted 52 nm thick Ti which existed underneath of Al sub(5)Ti sub(2) might lead to retardation of the reaction between Al sub(5)Ti sub(2) and the underlying SiO sub(2). Hence, the formation of ternary compound (Al sub(x)Ti sub(y)Si sub(z)) which is believed to be detrimental to the contact metallization layers was protected.</description><issn>0022-2461</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNqNisFqwkAQQPdgobH1H-Zi0UN0s03MWaTFHsRCvMuaTGBkk013ZhH79c3BD-jpwXtvohKtjUlNvsme1ZT5qrUuSpMlqqskNnfwLVAvGFpbk3UQ0NZCvufRwkj6xQY6lDENznJnYfF1-F5Cg4NnkjFuXapXxfwmsIvrE60rOgLHy8IsKwKWEGuJAV_VU2sd4-zBF_X2-XHa7dMh-J-ILOeOuEbnbI8-8tmUZW7yPHv_9_gHB8JJ2Q</recordid><startdate>20001201</startdate><enddate>20001201</enddate><creator>Lee, Y K</creator><creator>Latt, Khin Maung</creator><creator>Jaehyung, Kim</creator><creator>Osipowicz, T</creator><creator>Chiam, Sher-Yi</creator><creator>Lee, Kangsoo</creator><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20001201</creationdate><title>Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO sub(2)Si structure</title><author>Lee, Y K ; Latt, Khin Maung ; Jaehyung, Kim ; Osipowicz, T ; Chiam, Sher-Yi ; Lee, Kangsoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_277424413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Y K</creatorcontrib><creatorcontrib>Latt, Khin Maung</creatorcontrib><creatorcontrib>Jaehyung, Kim</creatorcontrib><creatorcontrib>Osipowicz, T</creatorcontrib><creatorcontrib>Chiam, Sher-Yi</creatorcontrib><creatorcontrib>Lee, Kangsoo</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Y K</au><au>Latt, Khin Maung</au><au>Jaehyung, Kim</au><au>Osipowicz, T</au><au>Chiam, Sher-Yi</au><au>Lee, Kangsoo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO sub(2)Si structure</atitle><jtitle>Journal of materials science</jtitle><date>2000-12-01</date><risdate>2000</risdate><volume>35</volume><issue>23</issue><spage>5857</spage><epage>5860</epage><pages>5857-5860</pages><issn>0022-2461</issn><abstract>Interfacial reactions in Al-0.5%wtCu/Ti/SiO sub(2)Si structure have been investigated up to the annealing temperature of 600 degree C for 30 min in Argon ambient. Annealing temperature at above 500 degree C, Al alloy and Ti start to react and produce Al sub(3)Ti, which was already reported. Annealing at higher temperatures (550 degree C, and 600 degree C) made Al sub(3) Ti transformed into Al sub(5)Ti sub(2), which is thermodynamically more stable than Al sub(3)Ti. The unreacted 52 nm thick Ti which existed underneath of Al sub(5)Ti sub(2) might lead to retardation of the reaction between Al sub(5)Ti sub(2) and the underlying SiO sub(2). Hence, the formation of ternary compound (Al sub(x)Ti sub(y)Si sub(z)) which is believed to be detrimental to the contact metallization layers was protected.</abstract></addata></record>
fulltext fulltext
identifier ISSN: 0022-2461
ispartof Journal of materials science, 2000-12, Vol.35 (23), p.5857-5860
issn 0022-2461
language eng
recordid cdi_proquest_miscellaneous_27742441
source Springer Nature - Complete Springer Journals
title Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO sub(2)Si structure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T08%3A44%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20of%20interfacial%20reactions%20in%20ionized%20metal%20plasma%20(IMP)%20deposited%20Al-0.5%25wt%20Cu/Ti/SiO%20sub(2)Si%20structure&rft.jtitle=Journal%20of%20materials%20science&rft.au=Lee,%20Y%20K&rft.date=2000-12-01&rft.volume=35&rft.issue=23&rft.spage=5857&rft.epage=5860&rft.pages=5857-5860&rft.issn=0022-2461&rft_id=info:doi/&rft_dat=%3Cproquest%3E27742441%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27742441&rft_id=info:pmid/&rfr_iscdi=true