STABILIZATION OF ZrSixOy FILMS BY IRRADIATION WITH AN ArF EXCIMER LASER

Authors analyzed the films chemically and physically. The phase shift and the transmittance of a transmissive film with a high O concentration increases and decreases, resp., with irradiation. This is because of an increase of Si-O-Zr bond structures. The phase shift and the transmittance of an abso...

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Veröffentlicht in:Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 7B, pp. 4561-4566. 2000 Part 1. Vol. 39, no. 7B, pp. 4561-4566. 2000, 2000, Vol.39 (7B), p.4561-4566
Hauptverfasser: Nakazawa, K, Matsuo, T, Onodera, T, Ogawa, T, Morimoto, H
Format: Artikel
Sprache:eng
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Zusammenfassung:Authors analyzed the films chemically and physically. The phase shift and the transmittance of a transmissive film with a high O concentration increases and decreases, resp., with irradiation. This is because of an increase of Si-O-Zr bond structures. The phase shift and the transmittance of an absorptive film with a low O concentration decreases and increases, resp., with irradiation because of photooxidation at the surface. The oxidation leads to the formation of Si-O-Zr and Si-O-Si bond structures in the films. Both films are stabilized by irradiation with a large irradiation energy. Authors interpret that both films are stabilized by the formation of Si-O-Zr bond structures, such as zircon, with saturation of O concentrations at the surface. 13 refs.
ISSN:0021-4922
DOI:10.1143/jjap.39.4561