Spatially Resolved Imaging of the Spectral Emission Characteristic of an InGaN/GaN-Multi Quantum Well- Light-Emitting Diode by Scanning Electroluminescence Microscopy
The microscopic spectral emission characteristic of an InGaN/GaN multi quantum well light-emitting diode is directly imaged by highly spectrally- and spatially-resolved scanning electroluminescence microscopy under operation as a function of injection current density from both, contact and substrate...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2000, Vol.39 (4S), p.2414-2416 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The microscopic spectral emission characteristic of an InGaN/GaN
multi quantum well light-emitting diode is directly imaged by highly
spectrally- and spatially-resolved scanning electroluminescence
microscopy under operation as a function of injection current
density from both, contact and substrate side. The mono- and
panchromatic luminescence intensity maps and especially the
peak-wavelength scanning images provide access to the optical
quality of the final device and yield direct images of the In
fluctuations with 1 µm spatial resolution. Indium
concentrations varying from around 0.09 to 0.11 are found in the
active InGaN-region of the near ultraviolet diode emitting at
404 nm with a FWHM of 20 nm. At high current density a 4 nm
redshift of emission wavelength due to ohmic heating is
observed. Whereas the mesa electroluminescence intensity mapping of
the front side becomes uniform for higher current densities, the
backside electroluminescence still shows electroluminescence
intensity fluctuations. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.39.2414 |