A single-electron three-input AND gate
The design of a single-electron AND gate with three inputs is presented for the first time in this paper. The operation of this gate has been simulated using a well-known single-electron circuit simulator. Furthermore, the stability of its operation has been studied by constructing the free-energy h...
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Veröffentlicht in: | Microelectronics 2002-03, Vol.33 (3), p.191-195 |
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creator | Tsimperidis, I Karafyllidis, I Thanailakis, A |
description | The design of a single-electron AND gate with three inputs is presented for the first time in this paper. The operation of this gate has been simulated using a well-known single-electron circuit simulator. Furthermore, the stability of its operation has been studied by constructing the free-energy history diagram, and by constructing and analyzing the corresponding three-dimensional stability plot, using Monte Carlo simulation. Simulation has verified the correct and stable operation of the gate. |
doi_str_mv | 10.1016/S0026-2692(01)00151-3 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27722135</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0026269201001513</els_id><sourcerecordid>27722135</sourcerecordid><originalsourceid>FETCH-LOGICAL-c338t-413a7c82c99a16a7fa72283b25fe40bc22f423061ba2573b0271b2d4c598544a3</originalsourceid><addsrcrecordid>eNqFkD1PwzAURS0EEqXwE5AyVTAY_J7tOJlQxbdUwQDMluO-FKM0KXaKxL8nbRnYmN4b7j3SPYydgrgAAfnlixCYc8xLPBNwLgRo4HKPjaAwJUdZwv6f_5AdpfQhhNAG1YhNplkK7aIhTg35PnZt1r9HIh7a1brPpk832cL1dMwOatckOvm9Y_Z2d_t6_cBnz_eP19MZ91IWPVcgnfEF-rJ0kDtTO4NYyAp1TUpUHrFWKEUOlUNtZCXQQIVz5XVZaKWcHLPJjruK3eeaUm-XIXlqGtdSt04WzQAEqYeg3gV97FKKVNtVDEsXvy0Iu7Fit1bsxooVYLdWrBx6V7seDSu-AkWbfKDW0zzEYb-dd-Efwg_QMmZh</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27722135</pqid></control><display><type>article</type><title>A single-electron three-input AND gate</title><source>Access via ScienceDirect (Elsevier)</source><creator>Tsimperidis, I ; Karafyllidis, I ; Thanailakis, A</creator><creatorcontrib>Tsimperidis, I ; Karafyllidis, I ; Thanailakis, A</creatorcontrib><description>The design of a single-electron AND gate with three inputs is presented for the first time in this paper. The operation of this gate has been simulated using a well-known single-electron circuit simulator. Furthermore, the stability of its operation has been studied by constructing the free-energy history diagram, and by constructing and analyzing the corresponding three-dimensional stability plot, using Monte Carlo simulation. Simulation has verified the correct and stable operation of the gate.</description><identifier>ISSN: 1879-2391</identifier><identifier>ISSN: 0026-2692</identifier><identifier>EISSN: 1879-2391</identifier><identifier>DOI: 10.1016/S0026-2692(01)00151-3</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Logic gates ; Nanoelectronics ; Single-electron circuits</subject><ispartof>Microelectronics, 2002-03, Vol.33 (3), p.191-195</ispartof><rights>2002 Elsevier Science Ltd</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-413a7c82c99a16a7fa72283b25fe40bc22f423061ba2573b0271b2d4c598544a3</citedby><cites>FETCH-LOGICAL-c338t-413a7c82c99a16a7fa72283b25fe40bc22f423061ba2573b0271b2d4c598544a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0026-2692(01)00151-3$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Tsimperidis, I</creatorcontrib><creatorcontrib>Karafyllidis, I</creatorcontrib><creatorcontrib>Thanailakis, A</creatorcontrib><title>A single-electron three-input AND gate</title><title>Microelectronics</title><description>The design of a single-electron AND gate with three inputs is presented for the first time in this paper. The operation of this gate has been simulated using a well-known single-electron circuit simulator. Furthermore, the stability of its operation has been studied by constructing the free-energy history diagram, and by constructing and analyzing the corresponding three-dimensional stability plot, using Monte Carlo simulation. Simulation has verified the correct and stable operation of the gate.</description><subject>Logic gates</subject><subject>Nanoelectronics</subject><subject>Single-electron circuits</subject><issn>1879-2391</issn><issn>0026-2692</issn><issn>1879-2391</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAURS0EEqXwE5AyVTAY_J7tOJlQxbdUwQDMluO-FKM0KXaKxL8nbRnYmN4b7j3SPYydgrgAAfnlixCYc8xLPBNwLgRo4HKPjaAwJUdZwv6f_5AdpfQhhNAG1YhNplkK7aIhTg35PnZt1r9HIh7a1brPpk832cL1dMwOatckOvm9Y_Z2d_t6_cBnz_eP19MZ91IWPVcgnfEF-rJ0kDtTO4NYyAp1TUpUHrFWKEUOlUNtZCXQQIVz5XVZaKWcHLPJjruK3eeaUm-XIXlqGtdSt04WzQAEqYeg3gV97FKKVNtVDEsXvy0Iu7Fit1bsxooVYLdWrBx6V7seDSu-AkWbfKDW0zzEYb-dd-Efwg_QMmZh</recordid><startdate>200203</startdate><enddate>200203</enddate><creator>Tsimperidis, I</creator><creator>Karafyllidis, I</creator><creator>Thanailakis, A</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200203</creationdate><title>A single-electron three-input AND gate</title><author>Tsimperidis, I ; Karafyllidis, I ; Thanailakis, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-413a7c82c99a16a7fa72283b25fe40bc22f423061ba2573b0271b2d4c598544a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Logic gates</topic><topic>Nanoelectronics</topic><topic>Single-electron circuits</topic><toplevel>online_resources</toplevel><creatorcontrib>Tsimperidis, I</creatorcontrib><creatorcontrib>Karafyllidis, I</creatorcontrib><creatorcontrib>Thanailakis, A</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsimperidis, I</au><au>Karafyllidis, I</au><au>Thanailakis, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A single-electron three-input AND gate</atitle><jtitle>Microelectronics</jtitle><date>2002-03</date><risdate>2002</risdate><volume>33</volume><issue>3</issue><spage>191</spage><epage>195</epage><pages>191-195</pages><issn>1879-2391</issn><issn>0026-2692</issn><eissn>1879-2391</eissn><abstract>The design of a single-electron AND gate with three inputs is presented for the first time in this paper. The operation of this gate has been simulated using a well-known single-electron circuit simulator. Furthermore, the stability of its operation has been studied by constructing the free-energy history diagram, and by constructing and analyzing the corresponding three-dimensional stability plot, using Monte Carlo simulation. Simulation has verified the correct and stable operation of the gate.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/S0026-2692(01)00151-3</doi><tpages>5</tpages></addata></record> |
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subjects | Logic gates Nanoelectronics Single-electron circuits |
title | A single-electron three-input AND gate |
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