A single-electron three-input AND gate
The design of a single-electron AND gate with three inputs is presented for the first time in this paper. The operation of this gate has been simulated using a well-known single-electron circuit simulator. Furthermore, the stability of its operation has been studied by constructing the free-energy h...
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Veröffentlicht in: | Microelectronics 2002-03, Vol.33 (3), p.191-195 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | The design of a single-electron AND gate with three inputs is presented for the first time in this paper. The operation of this gate has been simulated using a well-known single-electron circuit simulator. Furthermore, the stability of its operation has been studied by constructing the free-energy history diagram, and by constructing and analyzing the corresponding three-dimensional stability plot, using Monte Carlo simulation. Simulation has verified the correct and stable operation of the gate. |
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ISSN: | 1879-2391 0026-2692 1879-2391 |
DOI: | 10.1016/S0026-2692(01)00151-3 |