Sputtering of YSZ buffer layers on ()Si for use in YBa2Cu3O7 based microwave circuits

Authors produced YSZ films on Si(100) for use as buffer layers for YBa2Cu3O7 microwave devices. The YSZ films, 30-100 nm thick, were grown by low frequency pulsed dc and rf magnetron sputtering under a variety of experimental conditions. YBa2Cu3O7 films, 300-600 nm thick, were grown using PLD in an atmosphere of 0.5 Torr O2 at 780 C. The critical temperature (Tc(R=0)) of the films produced was 80 K. These were used to build microwave coplanar resonators. Authors designed a simple coplanar T resonator structure. Microwave tests at T=20 K showed a resonance with a quality factor > 20000 at a frequency of 3.87 GHz. 17 refs.