Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates

The room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates was presented. The threshold current density of 610 A/cm super(2) was obtained from a 1.1 mm-long broad area laser with the emission wavelength of 1.2 mu m. Results showed that the lasing wavelength was 1.2...

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Veröffentlicht in:	Electronics letters 2002-06, Vol.38 (12), p.564-565
Hauptverfasser:	Ryu, S.-W., Dapkus, P.D.
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description	The room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates was presented. The threshold current density of 610 A/cm super(2) was obtained from a 1.1 mm-long broad area laser with the emission wavelength of 1.2 mu m. Results showed that the lasing wavelength was 1.2 mu m and was 80 nm shorter than the photoluminescence (PL) peak wavelength due to the carrier pileup.
doi_str_mv	10.1049/el:20020410
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title	Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates
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