Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates
The room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates was presented. The threshold current density of 610 A/cm super(2) was obtained from a 1.1 mm-long broad area laser with the emission wavelength of 1.2 mu m. Results showed that the lasing wavelength was 1.2...
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| Veröffentlicht in: | Electronics letters 2002-06, Vol.38 (12), p.564-565 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates was presented. The threshold current density of 610 A/cm super(2) was obtained from a 1.1 mm-long broad area laser with the emission wavelength of 1.2 mu m. Results showed that the lasing wavelength was 1.2 mu m and was 80 nm shorter than the photoluminescence (PL) peak wavelength due to the carrier pileup. |
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| ISSN: | 0013-5194 1350-911X |
| DOI: | 10.1049/el:20020410 |