Optical second-harmonic phase spectroscopy of the Si(111)-SiO sub(2) interface

Optical second-harmonic phase spectroscopy of the Si(111)-SiO sub(2) interface

The two-photon interband electron transitions in a silicon layer directly underneath the Si(111)-SiO sub(2) interface in the vicinity of the E sub(2) critical point (CP) are probed by optical second-harmonic (SH) spectroscopy. The combination of the SH phase and intensity spectroscopy allows the com...

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Veröffentlicht in:Thin solid films 2000-01, Vol.364 (1), p.91-94
Hauptverfasser: Aktsipetrov, O A, Dolgova, T V, Fedyanin, A A, Schuhmacher, D, Marowsky, G
Format: Artikel
Sprache:eng
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Zusammenfassung:The two-photon interband electron transitions in a silicon layer directly underneath the Si(111)-SiO sub(2) interface in the vicinity of the E sub(2) critical point (CP) are probed by optical second-harmonic (SH) spectroscopy. The combination of the SH phase and intensity spectroscopy allows the complete deconvolution of the spectral behavior of the amplitude and phase of the quadratic susceptibility Chi super((2)) near the E sub(2) critical point of silicon.
ISSN:0040-6090