Epitaxial Growth of 3C-SiC on Thin Silicon-on-Insulator Substrate by Chemical Vapor Deposition Using Alternating Gas Supply

Epitaxial 3C-SiC film has been grown on thin silicon-on-insulator (SOI) substrate by chemical vapor deposition (CVD) using an alternating supply of SiH 2 Cl 2 and C 2 H 2 . The SiC surface deposited on SOI substrate is almost flat with few hillocks, and the full-width at half maximum (FWHM) of the X-ray diffraction (XRD) peak of the SiC(111) was 0.2°. Use of a thin SOI substrate is found to be essential to suppress the growth of voids that appear at the SiC/Si interface.