Pseudorandom pulsed I/V characterization of MESFET/HEMT devices

Pseudorandom pulsed I/V characterization of MESFET/HEMT devices

An automated system for observing the dependence of the frequency dispersion effect on the electric field for GaAs MESFET/HEMT devices is presented. The system employs a pseudorandom pulse current/voltage (I/V) measurement system for observing the memory effect in these devices. Results indicate a m...

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Veröffentlicht in:Electronics letters 2000-06, Vol.36 (12), p.1075-1076
Hauptverfasser: Rodriguez-Tellez, J, Fernandez, T, Mediavilla, A, Tazon, A
Format: Artikel
Sprache:eng
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Zusammenfassung:An automated system for observing the dependence of the frequency dispersion effect on the electric field for GaAs MESFET/HEMT devices is presented. The system employs a pseudorandom pulse current/voltage (I/V) measurement system for observing the memory effect in these devices. Results indicate a much larger change in the device I/V characteristic is due to trapping effects.
ISSN:0013-5194
DOI:10.1049/el:20000783