Large-area atomic-smooth polyvinylidene fluoride Langmuir-Blodgett film exhibiting significantly improved ferroelectric and piezoelectric responses
Large roughness and structure disorder in ferroelectric ultrathin Langmuir–Blodgett film had been limiting the nanoscale research and reliability of nano-devices. However, no effective method aiming at large-area uniform organic ferroelectric LB film has ever been reported to date. Herein, we presen...
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Veröffentlicht in: | Science bulletin 2021-06, Vol.66 (11), p.1080-1090 |
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Sprache: | eng |
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Zusammenfassung: | Large roughness and structure disorder in ferroelectric ultrathin Langmuir–Blodgett film had been limiting the nanoscale research and reliability of nano-devices. However, no effective method aiming at large-area uniform organic ferroelectric LB film has ever been reported to date. Herein, we present a facile hot-pressing strategy to prepare relatively large-area PVDF LB film with atomic-smooth surface, less fluctuation in ferroelectric characteristics and improved dielectric and piezoelectric responses, which endows PVDF LB film with unprecedented reliability and improved performance as a competitive candidate for future ferroelectric tunnel junctions (FTJs) and nano electro mechanical systems (NEMS). Besides, different surface charge relaxation behaviors are investigated and the underlying mechanisms are explained in the light of the interplay of surface charge and polarization charge in the case of nanoscale non-uniform switching.
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Large roughness and structure disorder in ferroelectric ultrathin Langmuir-Blodgett (LB) film results in severe space scatter in electrical, ferroelectric and piezoelectric characteristics, thus limiting the nanoscale research and reliability of nano-devices. However, no effective method aiming at large-area uniform organic ferroelectric LB film has ever been reported to date. Herein, we present a facile hot-pressing strategy to prepare relatively large-area poly(vinylidene fluoride) (PVDF) LB film with ultra-smooth surface root mean square (RMS) roughness is 0.3 nm in a 30 μm × 30 μm area comparable to that of metal substrate, which maximized the potential of LB technique to control thickness distribution. More importantly, compared with traditionally annealed LB film, the hot-pressed LB film manifests significantly improved structure uniformity, less fluctuation in ferroelectric characteristics and higher dielectric and piezoelectric responses, owing to the uniform dipole orientation and higher crystalline quality. Besides, different surface charge relaxation behaviors are investigated and the underlying mechanisms are explained in the light of the interplay of surface charge and polarization charge in the case of nanoscale non-uniform switching. We believe that our work not only presents a novel strategy to endow PVDF LB film with unprecedented reliability and improved performance as a competitive candidate for future ferroelectric tunnel junctions (FTJs) and nano electro mechanical systems (NEMS), but als |
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ISSN: | 2095-9273 2095-9281 |
DOI: | 10.1016/j.scib.2021.02.004 |