Comment on "Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping" by W. Lin, J. Kang et al. , Phys. Chem. Chem. Phys. , 2022, 24 , 5529

Comment on "Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping" by W. Lin, J. Kang et al. , Phys. Chem. Chem. Phys. , 2022, 24 , 5529

Lu (2022), , 5529 uses incorrect explanations for their findings based on an incorrect application of ideas from tight-binding methods. An alternative qualitative explanation based on strain variations and a tight-binding model based on nearest neighbor interactions is provided.

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Veröffentlicht in:Physical chemistry chemical physics : PCCP 2023-02, Vol.25 (5), p.4349-4351
1. Verfasser: Lambrecht, Walter R L
Format: Artikel
Sprache:eng
Schlagworte:
Binding
Quantum wells
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Zusammenfassung:Lu (2022), , 5529 uses incorrect explanations for their findings based on an incorrect application of ideas from tight-binding methods. An alternative qualitative explanation based on strain variations and a tight-binding model based on nearest neighbor interactions is provided.
ISSN:1463-9076
1463-9084
DOI:10.1039/d2cp01080a