Optical Characterization of InGaAs Quantum Wells after InP-GaAs Low-Temperature Wafer Bonding

The low-temperature wafer bonding of InGaAs/InP and GaAs was carried out at 200 C. The optical characteristic of lattice-matched InGaAs quantum wells (QWs) grown on an InP substrate which was bonded to a GaAs layer was investigated by measuring photoluminescence (PL) spectra at 77 K. After bonding, neither wavelength shift nor degradation of FWHM was observed. This implies that the bonding temperature of 200 C is sufficiently low to preserve the quality of InGaAs QWs. The low-temperature wafer bonding method is attractive to realize optically pumped long-wavelength vertical cavity surface emitting lasers and high power lasers. 11 refs.