The properties of annealed AlN films deposited by pulsed laser deposition

AlN films deposited on SiC or sapphire substrates by pulsed laser deposition were annealed at 1200 degree C, 1400 degree C, and 1600 degree C for 30 min in an inert atmosphere to examine how their structure, surface morphology, and substrate-film interface are altered during high temperature thermal processing. Shifts in the x-ray rocking curve peaks suggest that annealing increases the film density or relaxes the films and reduces the c-axis Poisson compression. Scanning electron micrographs show that the AlN begins to noticeably evaporate at 1600 degree C, and the evaporation rate is higher for the films grown on sapphire because the as-deposited film contained more pinholes. Rutherford backscattering spectroscopy shows that the interface between the film and substrate improves with annealing temperature for SiC substrates, but the interface quality for the 1600 degree C anneal is poorer than it is for the 1400 degree C anneal when the substrate is sapphire. Transmission electron micrographs show that the as-deposited films on SiC contain many stacking faults, while those annealed at 1600 degree C have a columnar structure with slightly misoriented grains. The as-deposited films on sapphire have an incoherent interface, and voids are formed at the interface when the samples are annealed at 1600 degree C. Auger electron spectroscopy shows that virtually no intermixing occurs across the interface, and that the annealed films contain less oxygen than the as-grown films.