Plasma-enhanced chemical vapor deposition of PbTiO3 thin films

Functional ceramic PbTiO3 thin films were prepared onto Si substrates by the plasma-enhanced chemical vapour deposition (PECVD) technique at the substrate temperature of 170 C. Lead tetraethyl [Pb(C2H5)4], titanium tetrachloride (TiCl4), and oxygen (O2) were used as precursors. The composition, stru...

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Veröffentlicht in:	Materials letters 2000-11, Vol.46 (2-3), p.60-64
Hauptverfasser:	Tong, Maosong, Dai, Guorui, Gao, Dingsan
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
Online-Zugang:	Volltext
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Zusammenfassung:	Functional ceramic PbTiO3 thin films were prepared onto Si substrates by the plasma-enhanced chemical vapour deposition (PECVD) technique at the substrate temperature of 170 C. Lead tetraethyl [Pb(C2H5)4], titanium tetrachloride (TiCl4), and oxygen (O2) were used as precursors. The composition, structure and morphology of the thin films were investigated by XRF spectroscopy, XRD, XPS and SEM. 8 refs.
ISSN:	0167-577X 1873-4979
DOI:	10.1016/S0167-577X(00)00143-9