Reduced power consumption in GaAs-based bipolar cascade lasers

Reduced power consumption in GaAs-based bipolar cascade lasers

A systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. The current voltage characteristics of individual degenerately doped n sup + and p sup + regions grown by MBE were investigated and the most promising designs were placed within the individual laser su...

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Veröffentlicht in:Electronics letters 2002-10, Vol.38 (21), p.1259-1261
Hauptverfasser: Siskaninetz, W.J., Ehret, J.E., Dang, T.N., Van Nostrand, J.E., Lott, J.A., Nelson, T.R.
Format: Artikel
Sprache:eng
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Zusammenfassung:A systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. The current voltage characteristics of individual degenerately doped n sup + and p sup + regions grown by MBE were investigated and the most promising designs were placed within the individual laser substructures. This resulted in a 1 V reduction in operating voltage, as verified by comparing the lasing characteristics of several edge-emitting laser devices.
ISSN:0013-5194
1350-911X
DOI:10.1049/el:20020857