Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics

Molecular dynamics (MD) calculations have been performed to simulate the heteroepitaxial growth process of GaN on sapphire (0001) substrates and the thermal stability of the low-temperature GaN layer during the annealing process has been investigated. The MD simulations indicated that the surface mo...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2000, Vol.39 (7S), p.4400-4403
Hauptverfasser:	Onozu, Takayuki, Miura, Ryuji, Takami, Seiichi, Kubo, Momoji, Miyamoto, Akira, Iyechika, Yasushi, Maeda, Takayoshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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