Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
Molecular dynamics (MD) calculations have been performed to simulate the heteroepitaxial growth process of GaN on sapphire (0001) substrates and the thermal stability of the low-temperature GaN layer during the annealing process has been investigated. The MD simulations indicated that the surface mo...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2000, Vol.39 (7S), p.4400-4403 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Molecular dynamics (MD) calculations have been performed to
simulate the heteroepitaxial growth process of GaN on sapphire
(0001) substrates and the thermal stability of the low-temperature
GaN layer during the annealing process has been investigated. The MD
simulations indicated that the surface morphology and the
crystallinity of GaN thin layers grown on sapphire at low
temperature of 800 K was amorphouslike and very rough. The surface
atomic morphology of the low-temperature GaN layer was improved
after the thermal annealing MD simulations at 1100 and 1200 K and
showed atomically hexagonal structures. The crystallinity of the GaN
epitaxial layer on the sapphire (0001) substrate is found to be
strongly dependent on the temperature of annealing. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.39.4400 |