A new approach to evaluation of hot-carrier lifetime of ring oscillator (RO)

The paper presents a novel experimental method to evaluate AC hot-carrier lifetime of a ring oscillator (RO). By using a series of different stages of ring oscillators (DSROs), the new method allows one to maintain a constant frequency (f/sub 0/) and obtain a closer value between pulse-to-pulse volt...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2002-09, Vol.49 (9), p.1672-1674
Hauptverfasser:	Jiong Zhang, Chu, S.-F.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Charge carrier lifetime CMOS integrated circuits Defects Devices Electric potential Hot carriers Integrated circuit reliability Integrated circuit testing Oscillators Voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!