A new approach to evaluation of hot-carrier lifetime of ring oscillator (RO)
The paper presents a novel experimental method to evaluate AC hot-carrier lifetime of a ring oscillator (RO). By using a series of different stages of ring oscillators (DSROs), the new method allows one to maintain a constant frequency (f/sub 0/) and obtain a closer value between pulse-to-pulse volt...
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Veröffentlicht in: | IEEE transactions on electron devices 2002-09, Vol.49 (9), p.1672-1674 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The paper presents a novel experimental method to evaluate AC hot-carrier lifetime of a ring oscillator (RO). By using a series of different stages of ring oscillators (DSROs), the new method allows one to maintain a constant frequency (f/sub 0/) and obtain a closer value between pulse-to-pulse voltage (V/sub p-p/) and bias condition throughout the RO lifetime testing. These two achievements eliminate the innate flaws in conventional RO hot-carrier test method. Hence, a more reliable AC lifetime of RO is expected. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2002.802660 |