One transistor ferroelectric memory with Pt/Pb5Ge3O11/Ir/Poly-Si /SiO2/Si gate stack

One transistor ferroelectric nonvolatile memory with gate stack of Pt/Pb5Ge3 O11/Ir/Poly-Si/SiO2/Si was successfully fabricated. This device features a saturated memory window of 3 V at a programming voltage of higher than 3 V from CV and IV measurements. The memory window decays rapidly within 10 s after programming, but remains stable at 1 V for up to 100 h. The "on" and "off" state currents are greater than 10 micro-A/micron and less 0.01 pA/micron, respectively, at a drain voltage of 0.1 V. (Author)