Nanoparticles of cadmium sulfide with europium and terbium in zirconia films having intensified luminescence

Semiconductor CdS particles were formed in ZrO 2 films, together with Eu 3+ and Tb 3+ ions. The steady-state, as well as the time-resolved luminescence, revealed that the intensity of emission of the REE is increased significantly in the presence of CdS particles. This phenomenon can be explained by...

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Veröffentlicht in:	Materials letters 2000, Vol.45 (3), p.154-156
Hauptverfasser:	Reisfeld, Renata, Gaft, Michael, Saridarov, Tsiala, Panczer, Gerard, Zelner, Marina
Format:	Artikel
Sprache:	eng
Schlagworte:	CdS Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron–hole recombination Eu 3+ ions Exact sciences and technology Ii-vi semiconductors Intense luminescence Nanocrystals and nanoparticles Nanoparticles Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Photoluminescence Physics Tb 3+ ions ZrO 2 films
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Beschreibung
Zusammenfassung:	Semiconductor CdS particles were formed in ZrO 2 films, together with Eu 3+ and Tb 3+ ions. The steady-state, as well as the time-resolved luminescence, revealed that the intensity of emission of the REE is increased significantly in the presence of CdS particles. This phenomenon can be explained by energy transfer resulting from electron–hole recombination in the CdS to the REE. From the lifetime measurements, it is evident that this transfer occurs in the nanosecond scale.
ISSN:	0167-577X 1873-4979
DOI:	10.1016/S0167-577X(00)00096-3