Improvement of grain-boundary conductivity of 8 mol % yttria-stabilized zirconia by precursor scavenging of siliceous phase
A new method of scavenging highly resistive siliceous phase using two-stage sintering, named as "precursor scavenging", is suggested for improving the grain-boundary conductivity of 8 mol% yttria-stabilised zirconia (YSZ). The scavenging efficiency and mechanism were studied and compared,...
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Veröffentlicht in: | Journal of the Electrochemical Society 2000-07, Vol.147 (7), p.2822-2829 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A new method of scavenging highly resistive siliceous phase using two-stage sintering, named as "precursor scavenging", is suggested for improving the grain-boundary conductivity of 8 mol% yttria-stabilised zirconia (YSZ). The scavenging efficiency and mechanism were studied and compared, using impedance spectroscopy and imaging secondary-ion mass spectroscopy, with those of 8YSZ-Al2O3 composites prepared by various methods. Heat-treatment at 1200 C for longer than 20 h before sintering increased grain-boundary conductivity remarkably. The forming of inclusions containing Si was considered to be the origin of scavenging. The grain-interior resistivity was not changed by precursor scavenging, while it increased more than 15% by adding 1 mol% Al2O3 when sintered at 1600 C. Precursor scavenging, therefore, is a potential method for improving grain boundary conductivity without deteriorating grain-interior conductivity. 44 refs. |
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ISSN: | 0013-4651 1945-7111 |
DOI: | 10.1149/1.1393612 |