An asymmetric channel SOI nMOSFET for improving DC and microwave characteristics

Asymmetric doped channel metal oxide semiconductor field effect transistors (MOSFETs) have recently been investigated by several authors in bulk and silicon-on-insulator (SOI) technologies as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage rolloff issues in deep sub-micrometer devices. In this paper, the DC and microwave characteristics of the asymmetric doped channel fully depleted (FD) SOI MOSFET are presented and compared to conventional uniformly doped FD SOI MOSFET.