Influence of melt convection on the interface during Czochralski crystal growth

During the growth process of single bulk crystals from melt, the defect density is strongly affected by the shape of the melt/crystal interface. The shape of the interface is governed by the construction of the growth equipment including the heating system and the convection in the melt. In this pap...

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Veröffentlicht in:	Solid-state electronics 2000-05, Vol.44 (5), p.825-830
Hauptverfasser:	Miller, W., Rehse, U., Böttcher, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	FIDAP GaAs Melt convection Melt/crystal interface Numerical simulation Single crystal growth
Online-Zugang:	Volltext
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