METALORGANIC VAPOUR PHASE EPITAXY GROWTH OF InP-BASED HETEROJUNCTION BIPOLAR TRANSISTORS WITH CARBON DOPED InGaAs BASE USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE IN N2 AMBIENT

A process for growth of heterostructure bipolar transistors (HBT) using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N2 ambient is realized, which is compatible with a high temperature overgrowth, thus suitable for the vertical integration of a laser structure on top of an HBT. A high growth temperature for the C-InGaAs base is favorable, to ensure no degradation during subsequent growth. Increasing the growth temperature after the base from 500 to 680 C within the emitter layer instead of at the base-emitter interface improved the ideality factors, the dc gain and the turn-on voltage. 32 refs.