METAL-ORGANIC CVD AND CHARACTERIZATION OF STRONTIUM BISMUTH TANTALATE (SBT) THIN FILMS

METAL-ORGANIC CVD AND CHARACTERIZATION OF STRONTIUM BISMUTH TANTALATE (SBT) THIN FILMS

The MOCVD of ferroelectric thin films is investigated for the manufacture of devices requiring a high density of volatile or nonvolatile memory which goes beyond the limits of current mass production techniques. One of the more important challenges in the MOCVD of multicomponent oxide thin films is...

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Veröffentlicht in:Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 9B, pp. 5485-5488. 2000 Part 1. Vol. 39, no. 9B, pp. 5485-5488. 2000, 2000-01, Vol.39 (9B), p.5485-5488
Hauptverfasser: Burgess, D, Schienle, F, Lindner, J, Schumacher, M, Juergensen, H, Solayappan, N
Format: Artikel
Sprache:eng
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Zusammenfassung:The MOCVD of ferroelectric thin films is investigated for the manufacture of devices requiring a high density of volatile or nonvolatile memory which goes beyond the limits of current mass production techniques. One of the more important challenges in the MOCVD of multicomponent oxide thin films is the precise control of stoichiometry which relates directly to the films' electrical characteristics. A novel approach to liquid precursor delivery embodied in the AIXTRON TriJetTM liquid delivery system is reported. Physical and electrical properties of thin films as well as deposition characteristics as a function of various process parameters are described in detail. 4 refs.
ISSN:0021-4922