Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors
Source/drain metallization to amorphous silicon thin-film transistors has been made by inkjet printing. Contact pads of a metal organic copper precursor were inkjet printed, and then converted to copper metal at a maximum process temperature of 200/spl deg/C. The copper contacts were used as the mas...
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Veröffentlicht in: | IEEE electron device letters 2000-08, Vol.21 (8), p.384-386 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Source/drain metallization to amorphous silicon thin-film transistors has been made by inkjet printing. Contact pads of a metal organic copper precursor were inkjet printed, and then converted to copper metal at a maximum process temperature of 200/spl deg/C. The copper contacts were used as the mask for back-channel etch. Laser printed toner was used for all other mask levels in a photoresist-free fabrication process. The inkjet printing of copper contacts represents a further step toward an all-printed thin-film transistor technology. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/55.852958 |