Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors

Source/drain metallization to amorphous silicon thin-film transistors has been made by inkjet printing. Contact pads of a metal organic copper precursor were inkjet printed, and then converted to copper metal at a maximum process temperature of 200/spl deg/C. The copper contacts were used as the mas...

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Veröffentlicht in:IEEE electron device letters 2000-08, Vol.21 (8), p.384-386
Hauptverfasser: Cheong Min Hong, Wagner, S.
Format: Artikel
Sprache:eng
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Zusammenfassung:Source/drain metallization to amorphous silicon thin-film transistors has been made by inkjet printing. Contact pads of a metal organic copper precursor were inkjet printed, and then converted to copper metal at a maximum process temperature of 200/spl deg/C. The copper contacts were used as the mask for back-channel etch. Laser printed toner was used for all other mask levels in a photoresist-free fabrication process. The inkjet printing of copper contacts represents a further step toward an all-printed thin-film transistor technology.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.852958