Mesh related problems in device simulation:: Treatments of meshing noise and leakage current

Mesh related problems in device simulation:: Treatments of meshing noise and leakage current

Technology CAD (TCAD) becomes more important, because of an increase in a complexity of VLSI design. However, TCAD still requires further improvements from the practical point of view. This paper describes new mesh related problems in a device simulation; a meshing noise and a leakage current proble...

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Veröffentlicht in:Solid-state electronics 2000, Vol.44 (1), p.11-16
Hauptverfasser: Shigyo, Naoyuki, Tanimoto, Hiroyoshi, Enda, Toshiyuki
Format: Artikel
Sprache:eng
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Zusammenfassung:Technology CAD (TCAD) becomes more important, because of an increase in a complexity of VLSI design. However, TCAD still requires further improvements from the practical point of view. This paper describes new mesh related problems in a device simulation; a meshing noise and a leakage current problems.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(99)00220-8