The image force effect on the barrier height in MOS structures: correlation of the corrected barrier height with temperature and the oxide thickness
The Fowler–Nordheim (FN) current in Si-poly (n+)-SiO2–Si(p) structures was measured and computed numerically using the complete integral equation taking into account the temperature, the flat-band voltage changes, the effective masses and the field dependence of the barrier shape with the image forc...
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| Veröffentlicht in: | Microelectronics and reliability 2000-04, Vol.40 (4-5), p.763-766 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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