The image force effect on the barrier height in MOS structures: correlation of the corrected barrier height with temperature and the oxide thickness

The Fowler–Nordheim (FN) current in Si-poly (n+)-SiO2–Si(p) structures was measured and computed numerically using the complete integral equation taking into account the temperature, the flat-band voltage changes, the effective masses and the field dependence of the barrier shape with the image force. The fit of the experimental data allows an accurate determination of the electron affinity difference (Φ) and the barrier height (ΦB) at the emitting Si-poly(n+) gate electrode–oxide interface. The correlation between the temperature changes of these two parameters and the oxide thickness is discussed.