INFLUENCE OF ORGANIC CONTAMINANT ON TRAP GENERATION IN THIN SiO2 OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS

The influence of a small amount of organic contaminant on the reliability and trap generation in thin SiO2 (2.8 nm) of MOS capacitors are reported. The MOS capacitors were fabricated with the addition of a storage process at various contamination levels before gate oxidation. Trap states at the Si/SiO2 interface were generated by application of a reverse-bias stress. For samples stored in the UV/photoelectron cleaning box, the contamination level was reduced and the trap generation was suppressed, resulting in improvement of the reliability of the gate oxide. The density of induced interface traps decreased after removing the stress, suggesting quenching of the damaged sites. 13 refs.