Analysis of I– V measurements on Ag/p-SnS and Ag/p-SnSe Schottky barriers

In this study, we have performed current–voltage ( I– V) measurements on single crystals p-SnS and p-SnSe at different temperatures in the vicinity of room temperature. These compound semiconductors belong to IV–VI layered material class. Hence, they show strong anisotropy for all properties. We realized all measurements on the easy cleavage plane perpendicular c-axis. From I– V characteristics, we have tried to determine some intrinsic and contact properties such as barrier heights, diode ideality factors and carrier concentrations. It has been found that both contacts are in Schottky type, while Ag/p-SnSe structures has showed better diode behavior.