A low-power 15-GHz frequency divider in a 0.8-μm silicon bipolar technology

A low-power 15-GHz frequency divider in a 0.8-μm silicon bipolar technology

In this paper, we present a low-power static frequency divider with a divide ratio of eight. It operates up to 15 GHz, consuming only 22 mA from a 3.6-V supply. The chip is manufactured in a 0.8- mu m silicon bipolar production technology with a cutoff frequency of 25 GHz. The circuit has a single-e...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2000, Vol.48 (2), p.205-208
Hauptverfasser: Knapp, H., Wilhelm, W., Wurzer, M.
Format: Artikel
Sprache:eng
Schlagworte:
Chips
Circuits
Frequency dividers
Microwaves
Packages
Silicon
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Zusammenfassung:In this paper, we present a low-power static frequency divider with a divide ratio of eight. It operates up to 15 GHz, consuming only 22 mA from a 3.6-V supply. The chip is manufactured in a 0.8- mu m silicon bipolar production technology with a cutoff frequency of 25 GHz. The circuit has a single-ended input and output and is mounted in a six-pin SOT363 plastic package
ISSN:0018-9480
DOI:10.1109/22.821762