Low threshold current densities for II-VI lasers

Low threshold current densities for II-VI lasers

II-VI-semiconductor-based, green-light-emitting laser diodes with significantly improved characteristics are reported. Threshold current densities of 42 A/cm super(2) are obtained. Novel contacts also lead to a 25% reduction in the threshold voltage and to an increased device lifetime by a factor of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Electronics letters 2000-05, Vol.36 (10), p.878-879
Hauptverfasser: Strassburg, M., Schulz, O., Pohl, U.W., Bimberg, D., Klude, M., Hommel, D.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:II-VI-semiconductor-based, green-light-emitting laser diodes with significantly improved characteristics are reported. Threshold current densities of 42 A/cm super(2) are obtained. Novel contacts also lead to a 25% reduction in the threshold voltage and to an increased device lifetime by a factor of 24 as compared to previous results.
ISSN:0013-5194
1350-911X
DOI:10.1049/el:20000673