Low temperature microcrystalline silicon thin film resistors on glass substrates
Doped microcrystalline silicon (μc-Si) thin film resistors have been processed at low temperatures (
Gespeichert in:
| Veröffentlicht in: | Solid-state electronics 2000-07, Vol.44 (7), p.1163-1168 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1168 |
|---|---|
| container_issue | 7 |
| container_start_page | 1163 |
| container_title | Solid-state electronics |
| container_volume | 44 |
| creator | Krishnan, Anand T. Bae, Sanghoon Fonash, Stephen J. |
| description | Doped microcrystalline silicon (μc-Si) thin film resistors have been processed at low temperatures ( |
| doi_str_mv | 10.1016/S0038-1101(00)00057-5 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_27560306</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0038110100000575</els_id><sourcerecordid>27560306</sourcerecordid><originalsourceid>FETCH-LOGICAL-c404t-7e134efff5e457eaa876c98792bc28f0ddbc39ca689ba20ce180767a9e97190f3</originalsourceid><addsrcrecordid>eNqFkE9LxDAQxYMouK5-BKEn0UN10jZNexIR_8GCgnoOaTrVSNqumVTZb292V7x6mmF47zHvx9gxh3MOvLx4BsirlMf9FOAMAIRMxQ6b8UrWaVaA2GWzP8k-OyD6iKKs5DBjT4vxOwnYL9HrMHlMemv8aPyKgnbODpiQddaMQxLe7ZB01vWJR7IURk9JPL85TZTQ1FCICUiHbK_TjvDod87Z6-3Ny_V9uni8e7i-WqSmgCKkEnleYNd1AgshUetKlqaOD2eNyaoO2rYxeW10WdWNzsAgr0CWUtdYS15Dl8_ZyTZ36cfPCSmo3pJB5_SA40Qqk6KEHMooFFth7EXksVNLb3vtV4qDWvNTG35qDUcBqA0_JaLvcuvD2OLLoldkLA4GW-vRBNWO9p-EHxYbeTk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27560306</pqid></control><display><type>article</type><title>Low temperature microcrystalline silicon thin film resistors on glass substrates</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Krishnan, Anand T. ; Bae, Sanghoon ; Fonash, Stephen J.</creator><creatorcontrib>Krishnan, Anand T. ; Bae, Sanghoon ; Fonash, Stephen J.</creatorcontrib><description>Doped microcrystalline silicon (μc-Si) thin film resistors have been processed at low temperatures (<300°C) using direct deposition in an electron cyclotron resonance high density plasma tool. These n-type doped μc-Si films (n-type μc-Si) have been deposited on Corning 1737 glass at electrode temperatures of 100–300°C. The impact of deposition parameters on the conductivity and crystallinity of the films has been investigated. We obtained conductive films at electrode temperatures as low as 100°C at higher RF substrate bias (30 W) and silane flow rate (3 sccm). Thin film resistors were fabricated using films deposited under these conditions. The temperature coefficient of resistivity of these devices is less than 1%/K. The activation energies for these devices are 0.07–0.13 eV in the 25–150°C range. A critical minimum deposition time was found, in excess of which the film conductivity does not change.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/S0038-1101(00)00057-5</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>High-density plasma ; Low-temperature deposition ; Microcrystalline Si film ; Thin film resistor</subject><ispartof>Solid-state electronics, 2000-07, Vol.44 (7), p.1163-1168</ispartof><rights>2000 Elsevier Science Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c404t-7e134efff5e457eaa876c98792bc28f0ddbc39ca689ba20ce180767a9e97190f3</citedby><cites>FETCH-LOGICAL-c404t-7e134efff5e457eaa876c98792bc28f0ddbc39ca689ba20ce180767a9e97190f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038110100000575$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65534</link.rule.ids></links><search><creatorcontrib>Krishnan, Anand T.</creatorcontrib><creatorcontrib>Bae, Sanghoon</creatorcontrib><creatorcontrib>Fonash, Stephen J.</creatorcontrib><title>Low temperature microcrystalline silicon thin film resistors on glass substrates</title><title>Solid-state electronics</title><description>Doped microcrystalline silicon (μc-Si) thin film resistors have been processed at low temperatures (<300°C) using direct deposition in an electron cyclotron resonance high density plasma tool. These n-type doped μc-Si films (n-type μc-Si) have been deposited on Corning 1737 glass at electrode temperatures of 100–300°C. The impact of deposition parameters on the conductivity and crystallinity of the films has been investigated. We obtained conductive films at electrode temperatures as low as 100°C at higher RF substrate bias (30 W) and silane flow rate (3 sccm). Thin film resistors were fabricated using films deposited under these conditions. The temperature coefficient of resistivity of these devices is less than 1%/K. The activation energies for these devices are 0.07–0.13 eV in the 25–150°C range. A critical minimum deposition time was found, in excess of which the film conductivity does not change.</description><subject>High-density plasma</subject><subject>Low-temperature deposition</subject><subject>Microcrystalline Si film</subject><subject>Thin film resistor</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNqFkE9LxDAQxYMouK5-BKEn0UN10jZNexIR_8GCgnoOaTrVSNqumVTZb292V7x6mmF47zHvx9gxh3MOvLx4BsirlMf9FOAMAIRMxQ6b8UrWaVaA2GWzP8k-OyD6iKKs5DBjT4vxOwnYL9HrMHlMemv8aPyKgnbODpiQddaMQxLe7ZB01vWJR7IURk9JPL85TZTQ1FCICUiHbK_TjvDod87Z6-3Ny_V9uni8e7i-WqSmgCKkEnleYNd1AgshUetKlqaOD2eNyaoO2rYxeW10WdWNzsAgr0CWUtdYS15Dl8_ZyTZ36cfPCSmo3pJB5_SA40Qqk6KEHMooFFth7EXksVNLb3vtV4qDWvNTG35qDUcBqA0_JaLvcuvD2OLLoldkLA4GW-vRBNWO9p-EHxYbeTk</recordid><startdate>20000701</startdate><enddate>20000701</enddate><creator>Krishnan, Anand T.</creator><creator>Bae, Sanghoon</creator><creator>Fonash, Stephen J.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20000701</creationdate><title>Low temperature microcrystalline silicon thin film resistors on glass substrates</title><author>Krishnan, Anand T. ; Bae, Sanghoon ; Fonash, Stephen J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c404t-7e134efff5e457eaa876c98792bc28f0ddbc39ca689ba20ce180767a9e97190f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>High-density plasma</topic><topic>Low-temperature deposition</topic><topic>Microcrystalline Si film</topic><topic>Thin film resistor</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Krishnan, Anand T.</creatorcontrib><creatorcontrib>Bae, Sanghoon</creatorcontrib><creatorcontrib>Fonash, Stephen J.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Krishnan, Anand T.</au><au>Bae, Sanghoon</au><au>Fonash, Stephen J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low temperature microcrystalline silicon thin film resistors on glass substrates</atitle><jtitle>Solid-state electronics</jtitle><date>2000-07-01</date><risdate>2000</risdate><volume>44</volume><issue>7</issue><spage>1163</spage><epage>1168</epage><pages>1163-1168</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>Doped microcrystalline silicon (μc-Si) thin film resistors have been processed at low temperatures (<300°C) using direct deposition in an electron cyclotron resonance high density plasma tool. These n-type doped μc-Si films (n-type μc-Si) have been deposited on Corning 1737 glass at electrode temperatures of 100–300°C. The impact of deposition parameters on the conductivity and crystallinity of the films has been investigated. We obtained conductive films at electrode temperatures as low as 100°C at higher RF substrate bias (30 W) and silane flow rate (3 sccm). Thin film resistors were fabricated using films deposited under these conditions. The temperature coefficient of resistivity of these devices is less than 1%/K. The activation energies for these devices are 0.07–0.13 eV in the 25–150°C range. A critical minimum deposition time was found, in excess of which the film conductivity does not change.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/S0038-1101(00)00057-5</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0038-1101 |
| ispartof | Solid-state electronics, 2000-07, Vol.44 (7), p.1163-1168 |
| issn | 0038-1101 1879-2405 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27560306 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | High-density plasma Low-temperature deposition Microcrystalline Si film Thin film resistor |
| title | Low temperature microcrystalline silicon thin film resistors on glass substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T12%3A46%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20temperature%20microcrystalline%20silicon%20thin%20film%20resistors%20on%20glass%20substrates&rft.jtitle=Solid-state%20electronics&rft.au=Krishnan,%20Anand%20T.&rft.date=2000-07-01&rft.volume=44&rft.issue=7&rft.spage=1163&rft.epage=1168&rft.pages=1163-1168&rft.issn=0038-1101&rft.eissn=1879-2405&rft_id=info:doi/10.1016/S0038-1101(00)00057-5&rft_dat=%3Cproquest_cross%3E27560306%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27560306&rft_id=info:pmid/&rft_els_id=S0038110100000575&rfr_iscdi=true |