Electron runaway and negative differential mobility in two-dimensional electron gas in elementary semiconductors

We show that two-dimensional electron gas in silicon or germanium should exhibit a negative differential mobility. This effect is caused by the electron runaway since, in contrast to the three-dimensional case, such runaway takes place even for deformation optical polar scattering. As a consequence...

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Veröffentlicht in:Solid state communications 2000-01, Vol.113 (10), p.565-568
Hauptverfasser: Dmitriev, A.P., Kachorovskii, V.Yu, Shur, M.S., Stroscio, M.
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Sprache:eng
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Zusammenfassung:We show that two-dimensional electron gas in silicon or germanium should exhibit a negative differential mobility. This effect is caused by the electron runaway since, in contrast to the three-dimensional case, such runaway takes place even for deformation optical polar scattering. As a consequence of the electron runaway, hot electron scatter into the valleys with a larger density of states, which leads to a negative differential mobility.
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(99)00534-7