Electron runaway and negative differential mobility in two-dimensional electron gas in elementary semiconductors
We show that two-dimensional electron gas in silicon or germanium should exhibit a negative differential mobility. This effect is caused by the electron runaway since, in contrast to the three-dimensional case, such runaway takes place even for deformation optical polar scattering. As a consequence...
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Veröffentlicht in: | Solid state communications 2000-01, Vol.113 (10), p.565-568 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We show that two-dimensional electron gas in silicon or germanium should exhibit a negative differential mobility. This effect is caused by the electron runaway since, in contrast to the three-dimensional case, such runaway takes place even for deformation optical polar scattering. As a consequence of the electron runaway, hot electron scatter into the valleys with a larger density of states, which leads to a negative differential mobility. |
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ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/S0038-1098(99)00534-7 |