High-voltage devices for 0.5-μm standard CMOS technology
The feasibility of the smart voltage extension (SVX) technique featuring complementary high-voltage devices without any modifications of the process steps of an 0.5-μm standard CMOS technology is discussed here. This letter focuses on the optimization of the breakdown voltage of the HVNMOS as well a...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2000-01, Vol.21 (1), p.40-42 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 42 |
|---|---|
| container_issue | 1 |
| container_start_page | 40 |
| container_title | IEEE electron device letters |
| container_volume | 21 |
| creator | Bassin, C. Ballan, H. Declercq, M. |
| description | The feasibility of the smart voltage extension (SVX) technique featuring complementary high-voltage devices without any modifications of the process steps of an 0.5-μm standard CMOS technology is discussed here. This letter focuses on the optimization of the breakdown voltage of the HVNMOS as well as the possible implementation of the HVPMOS. Different high-voltage options with increasing process modification steps are discussed as a function of the required high-voltage capabilities. |
| doi_str_mv | 10.1109/55.817446 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_27555099</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>817446</ieee_id><sourcerecordid>27555099</sourcerecordid><originalsourceid>FETCH-LOGICAL-c340t-fe181d3b6abe60fe279f2e684d02a32576f8df2742b425e78e53ce3548c70a5e3</originalsourceid><addsrcrecordid>eNqF0L1OwzAUBWALgUQpDKxMmUAMKdc_13ZGVAFFKuoAzJGbXLdBaV3itFLfjWfgmWiVihGmM5xPZziMXXIYcA7ZHeLAcqOUPmI9jmhTQC2PWQ-M4qnkoE_ZWYwfAFwpo3osG1WzeboJdetmlJS0qQqKiQ9NAgNMv78WSWzdsnRNmQxfJq9JS8V8Geow256zE-_qSBeH7LP3x4e34SgdT56eh_fjtJAK2tQTt7yUU-2mpMGTMJkXpK0qQTgp0GhvSy-MElMlkIwllAVJVLYw4JBkn910u6smfK4ptvmiigXVtVtSWMc840pLKyDbyes_pbAiM1bg_9AgImT7xdsOFk2IsSGfr5pq4ZptziHf_50j5t3fO3vV2YqIft2h_AHCXni4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27555099</pqid></control><display><type>article</type><title>High-voltage devices for 0.5-μm standard CMOS technology</title><source>IEEE Electronic Library (IEL)</source><creator>Bassin, C. ; Ballan, H. ; Declercq, M.</creator><creatorcontrib>Bassin, C. ; Ballan, H. ; Declercq, M.</creatorcontrib><description>The feasibility of the smart voltage extension (SVX) technique featuring complementary high-voltage devices without any modifications of the process steps of an 0.5-μm standard CMOS technology is discussed here. This letter focuses on the optimization of the breakdown voltage of the HVNMOS as well as the possible implementation of the HVPMOS. Different high-voltage options with increasing process modification steps are discussed as a function of the required high-voltage capabilities.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.817446</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Breakdown ; CMOS ; CMOS technology ; Current density ; Devices ; Doping ; Electric potential ; Electrons ; Electrostatics ; Feasibility ; Immune system ; MOSFETs ; Optimization ; Silicon ; Voltage</subject><ispartof>IEEE electron device letters, 2000-01, Vol.21 (1), p.40-42</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-fe181d3b6abe60fe279f2e684d02a32576f8df2742b425e78e53ce3548c70a5e3</citedby><cites>FETCH-LOGICAL-c340t-fe181d3b6abe60fe279f2e684d02a32576f8df2742b425e78e53ce3548c70a5e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/817446$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/817446$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bassin, C.</creatorcontrib><creatorcontrib>Ballan, H.</creatorcontrib><creatorcontrib>Declercq, M.</creatorcontrib><title>High-voltage devices for 0.5-μm standard CMOS technology</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>The feasibility of the smart voltage extension (SVX) technique featuring complementary high-voltage devices without any modifications of the process steps of an 0.5-μm standard CMOS technology is discussed here. This letter focuses on the optimization of the breakdown voltage of the HVNMOS as well as the possible implementation of the HVPMOS. Different high-voltage options with increasing process modification steps are discussed as a function of the required high-voltage capabilities.</description><subject>Breakdown</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Current density</subject><subject>Devices</subject><subject>Doping</subject><subject>Electric potential</subject><subject>Electrons</subject><subject>Electrostatics</subject><subject>Feasibility</subject><subject>Immune system</subject><subject>MOSFETs</subject><subject>Optimization</subject><subject>Silicon</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0L1OwzAUBWALgUQpDKxMmUAMKdc_13ZGVAFFKuoAzJGbXLdBaV3itFLfjWfgmWiVihGmM5xPZziMXXIYcA7ZHeLAcqOUPmI9jmhTQC2PWQ-M4qnkoE_ZWYwfAFwpo3osG1WzeboJdetmlJS0qQqKiQ9NAgNMv78WSWzdsnRNmQxfJq9JS8V8Geow256zE-_qSBeH7LP3x4e34SgdT56eh_fjtJAK2tQTt7yUU-2mpMGTMJkXpK0qQTgp0GhvSy-MElMlkIwllAVJVLYw4JBkn910u6smfK4ptvmiigXVtVtSWMc840pLKyDbyes_pbAiM1bg_9AgImT7xdsOFk2IsSGfr5pq4ZptziHf_50j5t3fO3vV2YqIft2h_AHCXni4</recordid><startdate>200001</startdate><enddate>200001</enddate><creator>Bassin, C.</creator><creator>Ballan, H.</creator><creator>Declercq, M.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7SP</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>200001</creationdate><title>High-voltage devices for 0.5-μm standard CMOS technology</title><author>Bassin, C. ; Ballan, H. ; Declercq, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-fe181d3b6abe60fe279f2e684d02a32576f8df2742b425e78e53ce3548c70a5e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Breakdown</topic><topic>CMOS</topic><topic>CMOS technology</topic><topic>Current density</topic><topic>Devices</topic><topic>Doping</topic><topic>Electric potential</topic><topic>Electrons</topic><topic>Electrostatics</topic><topic>Feasibility</topic><topic>Immune system</topic><topic>MOSFETs</topic><topic>Optimization</topic><topic>Silicon</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bassin, C.</creatorcontrib><creatorcontrib>Ballan, H.</creatorcontrib><creatorcontrib>Declercq, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bassin, C.</au><au>Ballan, H.</au><au>Declercq, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-voltage devices for 0.5-μm standard CMOS technology</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2000-01</date><risdate>2000</risdate><volume>21</volume><issue>1</issue><spage>40</spage><epage>42</epage><pages>40-42</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The feasibility of the smart voltage extension (SVX) technique featuring complementary high-voltage devices without any modifications of the process steps of an 0.5-μm standard CMOS technology is discussed here. This letter focuses on the optimization of the breakdown voltage of the HVNMOS as well as the possible implementation of the HVPMOS. Different high-voltage options with increasing process modification steps are discussed as a function of the required high-voltage capabilities.</abstract><pub>IEEE</pub><doi>10.1109/55.817446</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2000-01, Vol.21 (1), p.40-42 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_27555099 |
| source | IEEE Electronic Library (IEL) |
| subjects | Breakdown CMOS CMOS technology Current density Devices Doping Electric potential Electrons Electrostatics Feasibility Immune system MOSFETs Optimization Silicon Voltage |
| title | High-voltage devices for 0.5-μm standard CMOS technology |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T17%3A49%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-voltage%20devices%20for%200.5-%CE%BCm%20standard%20CMOS%20technology&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Bassin,%20C.&rft.date=2000-01&rft.volume=21&rft.issue=1&rft.spage=40&rft.epage=42&rft.pages=40-42&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/55.817446&rft_dat=%3Cproquest_RIE%3E27555099%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=27555099&rft_id=info:pmid/&rft_ieee_id=817446&rfr_iscdi=true |