Growth of III–V semiconductor layers on Si patterned substrates

Patterned unheated Si{100} substrates in the form of the regular tetragonal pyramids and a structure like hemispherical plates have been found to be effective for a pulse vacuum thermal deposition (pulse-VTD) of GaAs and GaP thin layers (50–500 nm). The effect of the pulse-VTD technological parameters (pulse duration, pulse period, pulse number, pulse current) and the features of the substrate patterns (terraces, steps, kinks, sponges) on the morphology, the composition and the crystallinity of GaAs and GaP layers have been characterized by scanning electron microscopy, electron X-ray analysis and electron diffraction.