Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

The electrical characteristics of InAs quantum dot (QDot) and quantum well (QW) structures embedded in GaAs confining layers were compared using current-voltage (I/V) and capacitance-voltage (C-V) characterization in the 80-300 K temperature range, and a special technique developed for measuring fas...

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Veröffentlicht in:	Thin solid films 2000-05, Vol.367 (1-2), p.89-92
Hauptverfasser:	HORVATH, Zs. J, DOZSA, L, VO VAN TUYEN, PÖDÖR, B, NEMCSICS, A, FRIGERI, P, GOMBIA, E, MOSCA, R, FRANCHI, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Physics
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Beschreibung
Zusammenfassung:	The electrical characteristics of InAs quantum dot (QDot) and quantum well (QW) structures embedded in GaAs confining layers were compared using current-voltage (I/V) and capacitance-voltage (C-V) characterization in the 80-300 K temperature range, and a special technique developed for measuring fast defect transient (FDT) in the 10 ns-1 ms range. Structures with quantum dots exhibit larger series resistance and lower apparent barrier heights than structures with quantum well. The C-V characteristics exhibit oscillations that are more pronounced at low temperatures.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/S0040-6090(00)00701-X