High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing

High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing

A molecular beam epitaxy grown GaInAsSb pin photodetector lattice matched to a GaSb substrate is reported. The mesa type detector has high responsivity in the 1.4 to 2.4 mu m wavelength range with -0.3 V bias, 40 mu A dark current for a 1 mm diameter detector and the highest detectivity D* of 2.6x10...

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Veröffentlicht in:Electronics letters 2000-07, Vol.36 (15), p.1301-1303
Hauptverfasser: Carter, B L, Shaw, E, Olesberg, J T, Chan, W K, Hasenberg, T C, Flatte, M E
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container_end_page 1303
container_issue 15
container_start_page 1301
container_title Electronics letters
container_volume 36
creator Carter, B L
Shaw, E
Olesberg, J T
Chan, W K
Hasenberg, T C
Flatte, M E
description A molecular beam epitaxy grown GaInAsSb pin photodetector lattice matched to a GaSb substrate is reported. The mesa type detector has high responsivity in the 1.4 to 2.4 mu m wavelength range with -0.3 V bias, 40 mu A dark current for a 1 mm diameter detector and the highest detectivity D* of 2.6x10 super(10)cm times Hz super(1/2)/W reported for a GaInAsSb detector. The measured responsivity compares well with k times p calculations.
doi_str_mv 10.1049/el:20000956
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title High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing
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