High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing

High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing

A molecular beam epitaxy grown GaInAsSb pin photodetector lattice matched to a GaSb substrate is reported. The mesa type detector has high responsivity in the 1.4 to 2.4 mu m wavelength range with -0.3 V bias, 40 mu A dark current for a 1 mm diameter detector and the highest detectivity D* of 2.6x10...

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Veröffentlicht in:Electronics letters 2000-07, Vol.36 (15), p.1301-1303
Hauptverfasser: Carter, B L, Shaw, E, Olesberg, J T, Chan, W K, Hasenberg, T C, Flatte, M E
Format: Artikel
Sprache:eng
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Zusammenfassung:A molecular beam epitaxy grown GaInAsSb pin photodetector lattice matched to a GaSb substrate is reported. The mesa type detector has high responsivity in the 1.4 to 2.4 mu m wavelength range with -0.3 V bias, 40 mu A dark current for a 1 mm diameter detector and the highest detectivity D* of 2.6x10 super(10)cm times Hz super(1/2)/W reported for a GaInAsSb detector. The measured responsivity compares well with k times p calculations.
ISSN:0013-5194
DOI:10.1049/el:20000956