Layer-Number-Dependent Magnetism and Anomalous Hall Effect in van der Waals Ferromagnet Fe5GeTe2

Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe5GeT...

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Veröffentlicht in:Nano letters 2022-12, Vol.22 (24), p.9839-9846
Hauptverfasser: Deng, Yazhou, Xiang, Ziji, Lei, Bin, Zhu, Kejia, Mu, Haimen, Zhuo, Weizhuang, Hua, Xiangyu, Wang, Mingjie, Wang, Zhengfei, Wang, Guopeng, Tian, Mingliang, Chen, Xianhui
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container_end_page 9846
container_issue 24
container_start_page 9839
container_title Nano letters
container_volume 22
creator Deng, Yazhou
Xiang, Ziji
Lei, Bin
Zhu, Kejia
Mu, Haimen
Zhuo, Weizhuang
Hua, Xiangyu
Wang, Mingjie
Wang, Zhengfei
Wang, Guopeng
Tian, Mingliang
Chen, Xianhui
description Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe5GeTe2. By studying the magnetoresistance and anomalous Hall effect (AHE) in nanoflakes with thicknesses down to monolayer, we demonstrate that while the bulk crystals exhibit soft ferromagnetism with an in-plane magnetic anisotropy, hard ferromagnetism develops upon thinning, and a perpendicular easy-axis anisotropy is realized in bilayer flakes, which is accompanied by a pronounced enhancement of AHE because of extrinsic mechanisms. For the monolayer flakes, the hard ferromagnetism is replaced by spin-glass-like behavior, in accordance with the localization effect in the 2D limit. Our results highlight the thickness-based tunability of the magnetotransport properties in the atomically thin vdW magnets that promises engineering of high-performance spintronic devices.
doi_str_mv 10.1021/acs.nanolett.2c02696
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fullrecord <record><control><sourceid>proquest_acs_j</sourceid><recordid>TN_cdi_proquest_miscellaneous_2753315313</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2753315313</sourcerecordid><originalsourceid>FETCH-LOGICAL-a229t-53a58bf104abb29edb7ac0d0bf5cf3be4b0462203cbe5ca93d8931d5f02e46143</originalsourceid><addsrcrecordid>eNo9kM1OwzAQhC0EEqXwBhx85JKytuO0PlalP0gFLkUcw9rZoFaJU-IEibevqxZOM9qdXY0-xu4FjARI8YgujDz6pqKuG0kHMjPZBRsIrSDJjJGX_36SXrObEHYAYJSGAftc4y-1yWtf2yhPtCdfkO_4C3556rah5ugLPvVNjVXTB77CquLzsiTX8a3nP-h5QS3_QKwCX1DbxuDxMnq9pA3JW3ZVxh3dnXXI3hfzzWyVrN-Wz7PpOkEpTZdohXpiSwEpWisNFXaMDgqwpXalspRaSDMpQTlL2qFRxcQoUegSJKWZSNWQPZz-7tvmu6fQ5fU2OKoq9BSL53KslYoUhIpROEUjt3zX9K2PxXIB-RFmfhz-wczPMNUBYChrow</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2753315313</pqid></control><display><type>article</type><title>Layer-Number-Dependent Magnetism and Anomalous Hall Effect in van der Waals Ferromagnet Fe5GeTe2</title><source>ACS Publications</source><creator>Deng, Yazhou ; Xiang, Ziji ; Lei, Bin ; Zhu, Kejia ; Mu, Haimen ; Zhuo, Weizhuang ; Hua, Xiangyu ; Wang, Mingjie ; Wang, Zhengfei ; Wang, Guopeng ; Tian, Mingliang ; Chen, Xianhui</creator><creatorcontrib>Deng, Yazhou ; Xiang, Ziji ; Lei, Bin ; Zhu, Kejia ; Mu, Haimen ; Zhuo, Weizhuang ; Hua, Xiangyu ; Wang, Mingjie ; Wang, Zhengfei ; Wang, Guopeng ; Tian, Mingliang ; Chen, Xianhui</creatorcontrib><description>Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe5GeTe2. By studying the magnetoresistance and anomalous Hall effect (AHE) in nanoflakes with thicknesses down to monolayer, we demonstrate that while the bulk crystals exhibit soft ferromagnetism with an in-plane magnetic anisotropy, hard ferromagnetism develops upon thinning, and a perpendicular easy-axis anisotropy is realized in bilayer flakes, which is accompanied by a pronounced enhancement of AHE because of extrinsic mechanisms. For the monolayer flakes, the hard ferromagnetism is replaced by spin-glass-like behavior, in accordance with the localization effect in the 2D limit. Our results highlight the thickness-based tunability of the magnetotransport properties in the atomically thin vdW magnets that promises engineering of high-performance spintronic devices.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/acs.nanolett.2c02696</identifier><language>eng</language><publisher>American Chemical Society</publisher><ispartof>Nano letters, 2022-12, Vol.22 (24), p.9839-9846</ispartof><rights>2022 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-6947-1407 ; 0000-0002-0788-9725 ; 0000-0001-7132-6591</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c02696$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acs.nanolett.2c02696$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>315,782,786,27083,27931,27932,56745,56795</link.rule.ids></links><search><creatorcontrib>Deng, Yazhou</creatorcontrib><creatorcontrib>Xiang, Ziji</creatorcontrib><creatorcontrib>Lei, Bin</creatorcontrib><creatorcontrib>Zhu, Kejia</creatorcontrib><creatorcontrib>Mu, Haimen</creatorcontrib><creatorcontrib>Zhuo, Weizhuang</creatorcontrib><creatorcontrib>Hua, Xiangyu</creatorcontrib><creatorcontrib>Wang, Mingjie</creatorcontrib><creatorcontrib>Wang, Zhengfei</creatorcontrib><creatorcontrib>Wang, Guopeng</creatorcontrib><creatorcontrib>Tian, Mingliang</creatorcontrib><creatorcontrib>Chen, Xianhui</creatorcontrib><title>Layer-Number-Dependent Magnetism and Anomalous Hall Effect in van der Waals Ferromagnet Fe5GeTe2</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe5GeTe2. By studying the magnetoresistance and anomalous Hall effect (AHE) in nanoflakes with thicknesses down to monolayer, we demonstrate that while the bulk crystals exhibit soft ferromagnetism with an in-plane magnetic anisotropy, hard ferromagnetism develops upon thinning, and a perpendicular easy-axis anisotropy is realized in bilayer flakes, which is accompanied by a pronounced enhancement of AHE because of extrinsic mechanisms. For the monolayer flakes, the hard ferromagnetism is replaced by spin-glass-like behavior, in accordance with the localization effect in the 2D limit. Our results highlight the thickness-based tunability of the magnetotransport properties in the atomically thin vdW magnets that promises engineering of high-performance spintronic devices.</description><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNo9kM1OwzAQhC0EEqXwBhx85JKytuO0PlalP0gFLkUcw9rZoFaJU-IEibevqxZOM9qdXY0-xu4FjARI8YgujDz6pqKuG0kHMjPZBRsIrSDJjJGX_36SXrObEHYAYJSGAftc4y-1yWtf2yhPtCdfkO_4C3556rah5ugLPvVNjVXTB77CquLzsiTX8a3nP-h5QS3_QKwCX1DbxuDxMnq9pA3JW3ZVxh3dnXXI3hfzzWyVrN-Wz7PpOkEpTZdohXpiSwEpWisNFXaMDgqwpXalspRaSDMpQTlL2qFRxcQoUegSJKWZSNWQPZz-7tvmu6fQ5fU2OKoq9BSL53KslYoUhIpROEUjt3zX9K2PxXIB-RFmfhz-wczPMNUBYChrow</recordid><startdate>20221228</startdate><enddate>20221228</enddate><creator>Deng, Yazhou</creator><creator>Xiang, Ziji</creator><creator>Lei, Bin</creator><creator>Zhu, Kejia</creator><creator>Mu, Haimen</creator><creator>Zhuo, Weizhuang</creator><creator>Hua, Xiangyu</creator><creator>Wang, Mingjie</creator><creator>Wang, Zhengfei</creator><creator>Wang, Guopeng</creator><creator>Tian, Mingliang</creator><creator>Chen, Xianhui</creator><general>American Chemical Society</general><scope>7X8</scope><orcidid>https://orcid.org/0000-0001-6947-1407</orcidid><orcidid>https://orcid.org/0000-0002-0788-9725</orcidid><orcidid>https://orcid.org/0000-0001-7132-6591</orcidid></search><sort><creationdate>20221228</creationdate><title>Layer-Number-Dependent Magnetism and Anomalous Hall Effect in van der Waals Ferromagnet Fe5GeTe2</title><author>Deng, Yazhou ; Xiang, Ziji ; Lei, Bin ; Zhu, Kejia ; Mu, Haimen ; Zhuo, Weizhuang ; Hua, Xiangyu ; Wang, Mingjie ; Wang, Zhengfei ; Wang, Guopeng ; Tian, Mingliang ; Chen, Xianhui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a229t-53a58bf104abb29edb7ac0d0bf5cf3be4b0462203cbe5ca93d8931d5f02e46143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Deng, Yazhou</creatorcontrib><creatorcontrib>Xiang, Ziji</creatorcontrib><creatorcontrib>Lei, Bin</creatorcontrib><creatorcontrib>Zhu, Kejia</creatorcontrib><creatorcontrib>Mu, Haimen</creatorcontrib><creatorcontrib>Zhuo, Weizhuang</creatorcontrib><creatorcontrib>Hua, Xiangyu</creatorcontrib><creatorcontrib>Wang, Mingjie</creatorcontrib><creatorcontrib>Wang, Zhengfei</creatorcontrib><creatorcontrib>Wang, Guopeng</creatorcontrib><creatorcontrib>Tian, Mingliang</creatorcontrib><creatorcontrib>Chen, Xianhui</creatorcontrib><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Deng, Yazhou</au><au>Xiang, Ziji</au><au>Lei, Bin</au><au>Zhu, Kejia</au><au>Mu, Haimen</au><au>Zhuo, Weizhuang</au><au>Hua, Xiangyu</au><au>Wang, Mingjie</au><au>Wang, Zhengfei</au><au>Wang, Guopeng</au><au>Tian, Mingliang</au><au>Chen, Xianhui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Layer-Number-Dependent Magnetism and Anomalous Hall Effect in van der Waals Ferromagnet Fe5GeTe2</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2022-12-28</date><risdate>2022</risdate><volume>22</volume><issue>24</issue><spage>9839</spage><epage>9846</epage><pages>9839-9846</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe5GeTe2. By studying the magnetoresistance and anomalous Hall effect (AHE) in nanoflakes with thicknesses down to monolayer, we demonstrate that while the bulk crystals exhibit soft ferromagnetism with an in-plane magnetic anisotropy, hard ferromagnetism develops upon thinning, and a perpendicular easy-axis anisotropy is realized in bilayer flakes, which is accompanied by a pronounced enhancement of AHE because of extrinsic mechanisms. For the monolayer flakes, the hard ferromagnetism is replaced by spin-glass-like behavior, in accordance with the localization effect in the 2D limit. Our results highlight the thickness-based tunability of the magnetotransport properties in the atomically thin vdW magnets that promises engineering of high-performance spintronic devices.</abstract><pub>American Chemical Society</pub><doi>10.1021/acs.nanolett.2c02696</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-6947-1407</orcidid><orcidid>https://orcid.org/0000-0002-0788-9725</orcidid><orcidid>https://orcid.org/0000-0001-7132-6591</orcidid></addata></record>
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title Layer-Number-Dependent Magnetism and Anomalous Hall Effect in van der Waals Ferromagnet Fe5GeTe2
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-04T09%3A18%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_acs_j&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Layer-Number-Dependent%20Magnetism%20and%20Anomalous%20Hall%20Effect%20in%20van%20der%20Waals%20Ferromagnet%20Fe5GeTe2&rft.jtitle=Nano%20letters&rft.au=Deng,%20Yazhou&rft.date=2022-12-28&rft.volume=22&rft.issue=24&rft.spage=9839&rft.epage=9846&rft.pages=9839-9846&rft.issn=1530-6984&rft.eissn=1530-6992&rft_id=info:doi/10.1021/acs.nanolett.2c02696&rft_dat=%3Cproquest_acs_j%3E2753315313%3C/proquest_acs_j%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2753315313&rft_id=info:pmid/&rfr_iscdi=true