Layer-Number-Dependent Magnetism and Anomalous Hall Effect in van der Waals Ferromagnet Fe5GeTe2

Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe5GeT...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nano letters 2022-12, Vol.22 (24), p.9839-9846
Hauptverfasser: Deng, Yazhou, Xiang, Ziji, Lei, Bin, Zhu, Kejia, Mu, Haimen, Zhuo, Weizhuang, Hua, Xiangyu, Wang, Mingjie, Wang, Zhengfei, Wang, Guopeng, Tian, Mingliang, Chen, Xianhui
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe5GeTe2. By studying the magnetoresistance and anomalous Hall effect (AHE) in nanoflakes with thicknesses down to monolayer, we demonstrate that while the bulk crystals exhibit soft ferromagnetism with an in-plane magnetic anisotropy, hard ferromagnetism develops upon thinning, and a perpendicular easy-axis anisotropy is realized in bilayer flakes, which is accompanied by a pronounced enhancement of AHE because of extrinsic mechanisms. For the monolayer flakes, the hard ferromagnetism is replaced by spin-glass-like behavior, in accordance with the localization effect in the 2D limit. Our results highlight the thickness-based tunability of the magnetotransport properties in the atomically thin vdW magnets that promises engineering of high-performance spintronic devices.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.2c02696