Growth of CuS thin films by the successive ionic layer adsorption and reaction method

The growth of copper sulfide thin films by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and normal pressure was studied. The CuS films were characterized by chemical analysis, XRD, SEM and UV spectroscopy. The growth rate of CuS was proportional to copper precursor concentration. The films were polycrystalline and showed no preferred orientation. The surface of the CuS thin films was rough compared with CdS films, which were used as buffer layer on ITO and glass substrates to enhance the weak adhesion of CuS to oxide surfaces.